Microscopic Analysis and Optical Properties

Suche


Device

Device Data

Options of Testing

Scanning electron microscope

Resolution: 5 nm,
secondary electron and backscatter detector, import of digital images, sputters (gold, gold-palladium , carbon), EDX equipment, micro radiography

Surface topography,
analysis of fracture surface,
element analysis

Optical microscope
(transmitted/incident light)

Magnification: 25 to 1000 times,
dark field, polarization,  differential interference contrast, fluorescence,  hot stage, import of digital images

Examination of grinds,
microsections and thin sections,
thermo-optical investigations

Optical microscope
(transmitted light)

Magnification: 25 to 1000 times,
bright field, polarization,  phase contrast, tilting compensator B (5), import of digital images

Examination of
microsections and thin sections,
quantitative polarization

Optical microscope
(transmitted/incident light)

Magnification: 50 to 1000 times, bright field, polarization

Examination of grinds,
microsections and thin sections

Macroscope
(transmitted/incident light)

Magnification: 8 to 80 times, bright field, polarization, photo and video facility

Examination of grinds,
' microsections and thin sections

Micro-scale traction equipment with transmitted light microscope

Max. test load: 20 N,
haul-off speed: 0.01 to 50 mm/min, polarization, test temperature: RT, photo and video facility

Computer-aided testing,
tensile test on thin sections,
structures caused by load,
elongation in individual structural layers

Slide microtome
rotation microtome

Section thickness: subject to material
(min. 3µm) freezer, micromilling device

Thin section generation,
surface processing

Saws to separate specimens
annular saw

Rotation speed: 100 to 3000 U/min
thrust: 0.1 to 20 mm/min
Cut section 500-20µm

Cut section: min. 0.5 mm
specimen clamping: max. 4 cm

gloss measuring equipment

Glancing angle: 20, 60 and/or 85°

Characterization of surface reflection

Wave-Scan measuring device


Characterization of surface
corrugation based on reflection
behaviors

Plasma processor

Plasma generated in micro wave
Operating pressure: 1 to 2.5 mbar
Gas: O2, O2 + He

Physical etching

Optical strain gauge for large surfaces

Visual field: 300 mm diameter

Determination of residual
stresses and orientations